PART |
Description |
Maker |
SFG16UD600 SFG16UD100 SFG16UD400 SFG16UD200 |
Voltage 200V ~600V 16.0 Amp Super Fast Rectifier Voltage 200V ~ 600V16.0 Amp Super Fast Rectifier
|
SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
|
KBP101G KBP104G KBP1005G KBP102G KBP110G |
VOLTAGE 50V ~ 1000V 1.5 AMP Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
4GBJ4005 4GBJ402 |
Voltage 50V ~ 1000V 4.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
|
GBJ5006 GBJ5004 GBJ50005 GBJ5001 GBJ5002 GBJ5008 G |
Voltage 50V ~ 1000V 50.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
RS405M RS407M |
VOLTAGE 50V ~ 1000V 4.0 AMP Glass Passivated Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
RS1505G |
VOLTAGE 50V ~ 1000V 15.0 AMP Glass Passivated Bridge Rectifiers
|
SeCoS Halbleitertechnologie...
|
GBJ10005 |
Voltage 50V ~ 1000V 10.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
IRFU220B IRFR220B IRFU220BTLTUFP001 IRFU220BTUFP00 |
200V N-Channel B-FET / Substitute of IRFR220 & IRFR220A 200V N-Channel B-FET / Substitute of IRFU220 & IRFU220A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
SR3200 |
VOLTAGE 200V 3.0 Amp Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道,功率MOS场效应管) 00V安培,N沟道功率MOSFET(为200V9A条,沟道,功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
S1GVB60-C |
Voltage 200V ~ 800V 1.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnol...
|
RS1M-T |
1A, 200V - 1000V Surface Mount Fast Recovery Rectifier
|
Taiwan Semiconductor Co...
|